SPC4539
N & P Pair Enhancement Mode MOSFET
DESCRIPTION
The SPC4539 is the N- and P-Channel enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
FEATURES
N-Channel
30V/6.8A,R
DS(ON)
= 34mΩ@V
GS
= 10V
30V/5.6A,R
DS(ON)
= 46mΩ@V
GS
= 4.5V
P-Channel
-30V/-5.7A,R
DS(ON)
= 60mΩ@V
GS
=- 10V
-30V/-4.4A,R
DS(ON)
= 80mΩ@V
GS
=-4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
PIN CONFIGURATION(SOP – 8P)
PART MARKING
2007/04/25
Ver.1
Page 1
SPC4539
N & P Pair Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
7
8
ORDERING INFORMATION
Part Number
SPC4539S8RG
SPC4539S8TG
※
SPC4539S8RG : 13” Tape Reel ; Pb – Free
※
SPC4539S8TG : Tube ; Pb – Free
Symbol
S1
G1
S2
G2
D2
D2
D1
D1
Description
Source 1
Gate 1
Source 2
Gate 2
Drain 2
Drain 2
Drain 1
Drain 1
Package
SOP- 8P
SOP- 8P
Part
Marking
SPC4539
SPC4539
ABSOULTE MAXIMUM RATINGS
(T
A
=25
℃
Unless otherwise noted)
Typical
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(T
J
=150
℃
)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T
≤
10sec
Steady State
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol
N-Channel
V
DSS
V
GSS
I
D
I
DM
I
S
P
D
T
J
T
STG
R
θJA
30
±20
P-Channel
-30
±20
Unit
V
V
A
A
A
W
℃
℃
6.8
5.6
30
2.3
2.5
1.6
-55/150
-55/150
50
80
-6.2
-4.6
-30
-2.3
2.8
1.8
52
80
℃/W
2007/04/25
Ver.1
Page 2
SPC4539
N & P Pair Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Symbol
Conditions
V
GS
=0V,I
D
= 250uA
V
GS
=0V,I
D
=-250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=V
GS
,I
D
=-250uA
V
DS
=0V,V
GS
=±20V
V
DS
=0V,V
GS
=±20V
V
DS
= 24V,V
GS
=0V
V
DS
=-24V,V
GS
=0V
V
DS
= 24V,V
GS
=0V T
J
=55℃
V
DS
=-24V,V
GS
=0V T
J
=55℃
V
DS
≥
5V,V
GS
= 10V
V
DS
≤
-5V,V
GS
=-10V
V
GS
= 10V,I
D
= 6.8A
V
GS
=-10V,I
D
=-5.7A
V
GS
= 4.5V,I
D
= 5.6A
V
GS
=-4.5V,I
D
=-4.4A
V
DS
= 15V,I
D
=-5.9A
V
DS
=-15V,I
D
=-5.0A
I
S
= 1.7A,V
GS
=0V
I
S
=-1.7A,V
GS
=0V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
30
-30
1.0
-1.0
Typ
Max. Unit
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
3.0
-3.0
±100
±100
1
-1
5
-5
0.026
0.045
0.036
0.060
15
9
0.8
-0.8
13
15
2.3
4
2
2
6
7
14
10
30
40
5
20
0.034
0.060
0.046
0.080
1.2
-1.2
20
25
V
nA
uA
A
Ω
S
V
30
-30
Drain-Source On-Resistance R
DS(on)
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
t
d(on)
Turn-On Time
t
r
t
d(off)
Turn-Off Time
t
f
gfs
V
SD
N-Channel
V
DS
= 15V,V
GS
= 10V , I
D
= 5.9A
P-Channel
V
DS
=-15V,V
GS
=-10V , I
D
= -5.0A
nC
N-Channel
V
DD
=15V,R
L
=15Ω
I
D
≡1.0A,V
GEN
=10V R
G
=6Ω
P-Channel
V
DD
=-15V,R
L
=15Ω
I
D
≡-1.0A,V
GEN
=-10V R
G
=6Ω
12
15
25
20
60
80
10
40
nS
2007/04/25
Ver.1
Page 3
SPC4539
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( NMOS )
2007/04/25
Ver.1
Page 4
SPC4539
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( NMOS )
2007/04/25
Ver.1
Page 5
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